Suppressing leakage by localized doping in Si nanotransistor channels.

By first principles atomistic analysis we demonstrate how controlled localized doping distributions in nanoscale Si transistors can suppress leakage currents. We consider dopants (B and P atoms) to be randomly confined to a ≈1  nm width doping region in the channel. If this region is located away from the electrodes, roughly 20% of the channel length L, the tunneling leakage is reduced 2× compared to the case of uniform doping and shows little variation. Oppositely, we find the leakage current increases by orders of magnitude and may result in large device variability. We calculate the maximum and minimum conductance ratio that characterizes the tunnel leakage for various values of L. We conclude that doping engineering provides a possible approach to resolve the critical issue of leakage current in nanotransistors.